****************************** * NEDQNT * * EDS DATA ANALYSIS PROGRAM * * 8706100020-NJZ * * Modified for the * * Mac by JFM * * with Language Systems * * MPW FORTRAN * * Remember CAPS LOCK and all * * elements & lines need 2 * * letters & numbers need * * the decimal point * * Toolbox Version in the * * Works! * ****************************** Data Analysis on: 25-JUL-89 at 18:11:44 PAUSE Note above and hit return to continue Which Detector did you use (High or Low) [L] Si(Li) Detector/Microscope Parameters ________________________________________ Parylene thickness(cm) = 1.0000E-05 Aluminium thickness(cm) = 0.0000E+00 Beryllium thickness(cm) = 0.0000E+00 Gold thickness(cm) = 1.5000E-06 Silicon Dead layer(cm) = 2.0000E-05 Silicon Act. layer(cm) = 2.0000E-01 X-ray Incid. Angle(deg) = 0.0000 Detector Azimuth (deg) = 45.0000 Detector Elevation(deg) = 0.0000 Detector Solid Angle(Sr) = 0.0430 FWHM of Mn K-alpha (eV) = 171.0000 Constant for Mn K-alpha = 4.3000 Incomplete Charge Const A= 0.0000 Incomplete Charge Const B= 0.0000 Enter Analysis/Specimen Identification : TEST FOR TFA ------------------------------ SELECT Type of Calculation ------------------------------ COMPOSITION from Intensity=C INTENSITY from Composition=I Enter your Choice [C] = Accelerating Voltage (kV)? : 200 Number of Elements to be Analyzed ? : 2 Enter Element,Line,Intensity of Peak Number 1 -[A2,A2,REAL] NI,K ,50000. NI K 50000.000 Enter Element,Line,Intensity of Peak Number 2 -[A2,A2,REAL] CU,K ,50000. CU K 50000.000 Int Wt% At% Wt%-Ratio At%-Ratio -------------------------------------------------------- NI K 5.000E+04 47.64 49.62 1.0000 1.0000 CU K 5.000E+04 52.36 50.38 1.0989 1.0154 Analysis by Thin Film Approximation -------------------------------------------------------- Absorption Correction? [Y] Y Enter Specimen Thickness (nm) along Beam Direction : 100 Enter Specimen Tilt: X-Axis, Y-Axis [ZZ,ZZ] : 35,0 Enter Specimen Density (Calculate by Averaging = 0.): Intensity Wt% At% Wt%-Ratio At%-Ratio -------------------------------------------------------- NI K --------------47.67 49.64 1.0000 1.0000 CU K --------------52.33 50.36 1.0978 1.0144 Analysis with Absorption Correction -------------------------------------------------------- Electron Incidence Angle = 63.66 Thickness (nm) = 100.00 Abs. Pathlength (nm) = 201.97 Density = 8.93 Iterations = 0 -> Thin Film Approx = XPT<0.1 <- XPT for NI K = 0.011 XPT for CU K = 0.009 Change Absorption Parameters? [N]: Tabulate Element Parameters? [Y] : X-ray Generation Parameters for NI K ______________________________________ Atomic Number = 28.00 Atomic Weight = 58.71 [g/M] X-ray Line Energy = 7.48 [keV] X-ray Edge Energy = 8.33 [keV] Overvoltage = 24.002 Cross-section = 235.74 [Barns] Fluorescence Yield = 0.432 Partition Function = 1.000 Detector Efficiency = 0.993 X-ray Generation Parameters for CU K ______________________________________ Atomic Number = 29.00 Atomic Weight = 63.54 [g/M] X-ray Line Energy = 8.05 [keV] X-ray Edge Energy = 8.98 [keV] Overvoltage = 22.274 Cross-section = 212.23 [Barns] Fluorescence Yield = 0.472 Partition Function = 1.000 Detector Efficiency = 0.994 Tabulate Mass Abs. Coeff. [Y] : Calculated Mass Absorption Coefficients _______________________________________ NI K in NI = 58.81 NI K in CU = 65.44 NI K in Compound = 62.28 CU K in NI = 48.14 CU K in CU = 53.56 CU K in Compound = 50.98 Tabulate Detector/Microscope Parameters [Y] : Which Detector did you use (High or Low) [L] Si(Li) Detector/Microscope Parameters ________________________________________ Parylene thickness(cm) = 1.0000E-05 Aluminium thickness(cm) = 0.0000E+00 Beryllium thickness(cm) = 0.0000E+00 Gold thickness(cm) = 1.5000E-06 Silicon Dead layer(cm) = 2.0000E-05 Silicon Act. layer(cm) = 2.0000E-01 X-ray Incid. Angle(deg) = 0.0000 Detector Azimuth (deg) = 45.0000 Detector Elevation(deg) = 0.0000 Detector Solid Angle(Sr) = 0.0430 FWHM of Mn K-alpha (eV) = 171.0000 Constant for Mn K-alpha = 4.3000 Incomplete Charge Const A= 0.0000 Incomplete Charge Const B= 0.0000 Do you wish to Enter more Data? [N] STOP